Description
The interferometric sensor series encompasses both white-light and near-infrared types, catering to a wide range of industrial measurement needs. White-light interferometric sensors utilize broadband light sources, significantly enhancing data acquisition capabilities; they enable high-precision thickness measurements over relatively long working distances and are suitable for optically non-dense objects such as thin layers, flat glass, and thin films. Near-infrared interferometric sensors are specifically designed for measuring the thickness of monocrystalline silicon wafers, silicon carbide wafers, and other transparent materials; leveraging Superluminescent Diode (SLED) technology, they are compatible with silicon wafers ranging from undoped to heavily doped. The entire series demonstrates exceptional stability across various measurement distances, offering a reliable and flexible solution for industrial thickness measurement.
White-light
| IV Series | Product Specifications | |||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| series Name | lvs_100 | lvs_100w | lvs_50 | lvs_50w | ||||||||
| controller Model | lvcs_100 | lvcs_100w | lvcs_50 | lvcs_50w | ||||||||
| compatible probe | lRvp_TvF | lvp_T10_Uv_vls | lRvp_TvF | lvp_T10_Uv_vls | ||||||||
| Recommended worKing Distance*1 | 55 mm ±2 mm | Non_telecentric probe, installation distance 5_10 mm | 55 mm ±2 mm | Non_telecentric probe, installation distance 5_10 mm |
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| Measurement Angle*2 | ±5。 | ±10。 | ±5。 | ±10。 | ||||||||
| Light spot Type*3 | Focused spot, Φ100 μm | Di仟use spot, spot diameter ≈ 4 mm at 10 mm distance | Focused spot, Φ100 μm | Di仟use spot, spot diameter ≈ 4 mm at 10 mm distance |
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| probe Diameter × Length | Φ20 × 77.7 mm (including fiber base length) | Φ6.35 × 3200 mm大6 | Φ20 × 77.7 mm (including fiber base length) | Φ6.35 × 3200 mm大6 | ||||||||
| probe weight | 108 g | 190 g | 108 g | 190 g | ||||||||
| probe protection class | lp40 | lp40 | lp40 | lp40 | ||||||||
| Number of sensor Heads | 1 | |||||||||||
| Measurement Range | approx. 2 μm_100 μm (n二1.5) | approx. 1 μm_50 μm (n二1.5) | approx. 2 μm_100 μm (n二1.5) | approx. 1 μm_50 μm (n二1.5) |
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| Repeatability*4 | 1 nm | 1 nm | 1 nm | 1 nm | ||||||||
| Linearity*5 | ≤ ±20 nm | ≤ ±20 nm | ≤ ±20 nm | ≤ ±20 nm | ||||||||
| sampling Rate | Max. 10 KHz | Max. 10 KHz | Max. 10 KHz | Max. 10 KHz | ||||||||
| lnput / output | Encoder lnput | AB / ABZ encoder input, configurable for triggering | ||||||||||
| Trigger lnput | pulse / level trigger | |||||||||||
| Digital output | Alarm output, comparator output | |||||||||||
| Analog output | Linear voltage output (0_5 v / 0_10 v / ±5 v / ±10 v) / 4_20 mA current output | |||||||||||
| lndustrial lnterfaces | Ethernet | 100BAsE_TX | ||||||||||
| UsB | UsB 2.0 Full_speed | |||||||||||
| Rs_485 | Modbus protocol, 19200_115200 baud rate | |||||||||||
| Measurement software | software | Tsconfocalstudio | ||||||||||
| sDK | c++ and c# development | |||||||||||
| Rated power | power supply | 24 vDc ±10% | ||||||||||
| current consumption | approx. 0.4 A | |||||||||||
| Environmental | operating Temperature | 0 to +50。 c | ||||||||||
| Humidity | 20 to 85% RH (non_condensing) | |||||||||||
| controller weight | approx. 2000 g | |||||||||||
| *1 Focal position where the return signal is strongest. | ||||||||||||
| *2 Measured using a standard flat mirror, tilt test at 1 kHz sampling rate. | ||||||||||||
| *3 Measured on a sharp glass edge using a sub-micron precision motion stage, verified against a laser interferometer. *4 Measured on a standard thickness sample, RMS deviation of 10,000 thickness data points at 1 kHz without averaging. *5 Theoretical value. |
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| *6 Total length 3200 mm, including probe and armored cable. | ||||||||||||
| \ \ \ \ IRS5 Series Controll | ||||||||||||
| Controller Model | lRC5400_s | lRC5200_s | lRC5030_s | |||||||||
| Measurement Range (n〓1) | 50_4000 μm | 23_2000 μm | 3_350 μm | |||||||||
| Measurement Range (n〓1.5) | 33.3_2667 μm | 15.3_1333 μm | 2_233 μm | |||||||||
| Measurement Range (n〓3.5) | 14.3_1143 μm | 6.6_571 μm | 0.86_100 μm | |||||||||
| spot Diameter*1 | Φ20 μm | Φ20 μm | Φ800 μm (customizable) | |||||||||
| Repeatability | <2 nm rms (measured on n〓1.5 glass sample) | <1 nm rms (measured on n〓1.5 glass sample) | <1 nm rms (measured on n〓1.5 glass sample) |
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| Linearity | ≤ ±0.1 μm | ≤ ±0.1 μm | ≤ ±0.05 μm | |||||||||
| lp Rating | lp40 | lp40 | lp40 | |||||||||
| Number of sensor Heads | 1 | |||||||||||
| sampling Rate | Max. 40 KHz | Max. 40 KHz | Max. 40 KHz | |||||||||
| lnput / output | Encoder lnput | AB / ABZ encoder input, configurable for triggering | ||||||||||
| Trigger lnput | pulse / level trigger | |||||||||||
| Digital output | Alarm output, comparator output | |||||||||||
| Analog output | Linear voltage output (0_5 v / 0_10 v / ±5 v / ±10 v) / 4_20 mA current output | |||||||||||
| lndustrial lnterfaces | Ethernet | 100BAsE_TX | ||||||||||
| UsB | UsB 2.0 High_speed | |||||||||||
| Rs485 | Modbus protocol, 9600_115200 baud rate | |||||||||||
| Measurement software | software | TsConfocalstudio | ||||||||||
| sDK | C++ and C# sDK | |||||||||||
| Rated power | power supply | 24 vDC ±10% | ||||||||||
| Current Consumption | approx. 0.4 A | |||||||||||
| 37 | ||||||||||||
Near-infrared Interferometers
| Product Specifications | |||||||||
|---|---|---|---|---|---|---|---|---|---|
| （Continued） | |||||||||
| Environmental | operating Temperature | 10 to +40o C | |||||||
| Humidity | 20 to 85% RH (non_condensing) | ||||||||
| Controller weight | approx. 5700 g | ||||||||
| *1 For thickness probes, the value refers to the spot diameter at the reference distance; for displacement probes, it refers to the spot diameter at the center of the measurement range. | |||||||||
| IRS5 Series Sensor Heads | |||||||||
| sensor Head Model | lRP_D20 | lRP_T50 | lRVP_TVF | ||||||
| sensor Head Type | Displacement sensor Head | Thickness sensor Head | / | ||||||
| Compatible Controller | lRC5200_s, lRC5400_s | lRC5200_s, lRC5400_s | lRC5030_s | lRC5200_s, lRC5400_s | |||||
| Reference Distance | 20 mm | 50 mm | side_view with prism: 34.5 mm φ2 mm ; Axial output: 55 mm φ2 mm |
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| Diameter 大 Length | φ10大58.5 mm | φ10大34.2 mm (including fiber length) | φ20大77.7 mm (including fiber length) | ||||||
| sensor Head weight | / | approx. 10 g | 108 g | ||||||
| Acceptance Angle | ±1.5。 | ±5。 | ±2。 | ||||||
| IRS4 Series | |||||||||
| controller Model | lRc4060_F/8/16 | ||||||||
| compatible sensor Head | lRvp_TvF (Thickness sensor Head) | lRp_T50 (Thickness sensor Head) | |||||||
| Reference Distance | 55 mm | 50 mm | |||||||
| Measurement Range | (n = 1): 20_600 μm | ||||||||
| (n = 1.5): 13.3_400 μm | |||||||||
| Acceptance Angle | ±5。 | ±2。 | |||||||
| spot Diameter *1 | approx. 100 μm | approx. 150 μm | |||||||
| Repeatability | 5 nm rms (measured at n = 1.5 glass sample) | ||||||||
| Linearity | ±0.1 μm | ||||||||
| Diameter * Length | Φ20*77.7 mm (including fiber length) | Φ10*34.2 mm (including fiber length) | |||||||
| sensor Head weight | 108 g | approx. 10 g | |||||||
| lp Rating | lp40 | ||||||||
| Number of sensor Heads | 4 / 8 / 16 | ||||||||
| sampling Rate | approx. 10 Hz (calculated by pc software) | ||||||||
| lnput ports | Encoder lnput | ABZ encoder input (3_channel), supports position acquisition and trigger | |||||||
| Trigger lnput | pulse / Level trigger | ||||||||
| output ports | Digital output | Alarm output, comparator output | |||||||
| Analog output | Linear 0_5 v / 0_10 v / ±5 v / ±10 v voltage output / 4_20 mA current output | ||||||||
| lndustrial lnterfaces | Ethernet | 100BAsE_TX | |||||||
| UsB | UsB 2.0 High speed | ||||||||
| Rs_485 | Modbus protocol, 9600_115200 baud rate | ||||||||
| Measurement software | software | lTHstudio measurement software | |||||||
| sDK | c++ and c# sDK | ||||||||
| Rated power | power supply | 24 vDc ±10% | |||||||
| current consumption | approx. 1 A / 1.8 A / 3.5 A (4 / 8 / 16 channels) | ||||||||
| Environmental | operating Temperature | 10 to +40。c | |||||||
| Humidity | 20 to 85% RH (non_condensing) | ||||||||
| controller weight | approx. 3000 g | ||||||||
| 38 | |||||||||
Target Applications & Selection Guide
1. Selection Guide by Material Type
- Semiconductor & Opaque/Semi-transparent Materials: (e.g., Silicon (Si), Silicon Carbide (SiC), Indium Phosphide (InP), Gallium Arsenide (GaAs))
- Recommended Solution: 5-Series Infrared Interferometer (penetrates opaque semiconductor substrates for high-precision thickness & depth measurement).
- Transparent Materials & Thin Films: (e.g., Glass, Ultra-thin Flexible Glass (UTG), PET Films, Optical Coatings, Adhesives/Glue)
- Recommended Solution: 4-Series Infrared Interferometer, White-Light Interferometer, or Film Thickness Gauge.
2. Key Industrial Applications
| Application Scenario | Recommended Device | Primary Measurement Capability |
|---|---|---|
| Semiconductor Wafers (Si, SiC, InP, GaAs) | 5-Series Infrared Interferometer | Wafer thickness, grinding & polishing monitoring, TSV depth |
| Glass, UTG & Optical Coatings | 4-Series / White-Light Interferometer | Ultra-thin glass thickness, surface gap, multi-layer coating |
| Transparent Films & Adhesives | Film Thickness Gauge / White-Light | PET multi-layer film thickness, PCB conformal coating |
3. Detailed Application Scenarios
- PCB Conformal Coating Thickness Measurement: Accurate non-contact thickness measurement of protective coatings on PCB assemblies to ensure insulation and environmental protection.
- Ultra-thin Flexible Glass (UTG) Thickness Measurement: High-precision, non-destructive thickness characterization for flexible display glass and cover panels.
- PET Multi-layer Film Thickness Measurement: Simultaneous inline or offline thickness evaluation for multi-layer PET and optical film stacks.
- TSV (Through-Silicon Via) Depth & Profile Measurement: Deep silicon penetration using infrared technology to precisely measure TSV depth and aspect ratios in 3D IC packaging.
- Advanced Packaging Wafer Bond Layer Thickness: Accurate gap and adhesive layer measurement during advanced semiconductor wafer bonding processes.
- Wafer Bonding Gap Measurement: Non-contact measurement of air gaps or interface bonding clearance between stacked wafers.
- Wafer Grinding & Polishing Thickness Monitoring: Real-time in-situ thickness tracking for semiconductor wafers during CMP (Chemical Mechanical Planarization) and back-grinding.
- Thickness Measurement Module Integration: Compact optical heads and integrated sensor modules designed for seamless OEM machine integration and automated production lines.
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